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High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode MOSFET compatible
IXBH 9N140G IXBH 9N160G
VCES IC25 VCE(sat) tfi
TO-247 AD
= = = =
1400/1600 V 9A 4.9 V typ. 70 ns
C G
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C (TAB)
Preliminary Data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C, TC = 90C TC = 25C, 1 ms VGE = 10 V, TVJ = 125C, RG = 27 VCE = 0.8*VCES Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 9N140G 9N160G 1400 1400 1600 1600 20 30 9 5 10 ICM = 12 100 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
Features * High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) * MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage * Monolithic construction - high blocking voltage capability - very fast turn-off characteristics * International standard package JEDEC TO-247 AD * Reverse conducting capability
C4
Applications Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies * CRT deflection * Lamp ballasts * * * *
1.15/10 Nm/lb.in. 6 g
Symbol
Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Advantages 9N140G 9N160G 1400 1600 3.5 TJ = 25C TJ = 125C 0.1 500 TJ = 125C 4.9 5.6 7 5.5 100 V V V A mA nA V V
046
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 0.25 mA, VGE = 0 V = 0.5 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
* Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * High power density
(c) 2000 IXYS All rights reserved
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
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IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
IXBH 9N140G IXBH 9N160G
Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 550 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 5 A, VCE = 600 V, VGE = 10 V Inductive load, TJ = 125C IC = IC90, VGE = 10 V, L = 100 H, VCE = 960 V, RG = 27 36 5 34 140 200 120 70 pF pF pF nC ns ns ns ns 1.25 K/W 0.25 K/W
Dim. A B C D Millimeter Min. Max. 19.81 20.32 20.80 21.46 Inches Min. Max. 0.780 0.800 0.819 0.845
TO-247 AD Outline
Cies Coes Cres Qg td(on) tri td(off) tfi RthJC RthCK
15.75 16.26 0.610 0.640 3.55 3.65 0.140 0.144 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
Reverse Conduction
Characteristic Values (TJ = 25C, unless otherwise specified) Conditions min. typ. 3.6 max. 5
E F G H J K L M N
Symbol VF
IF = IC90, VGE = 0 V
1.5 2.49
C4
(c) 2000 IXYS All rights reserved
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IXBH 9N140G IXBH 9N160G
30
TJ = 25C VGE = 17V
30
15V 13V 11V TJ = 125C VGE = 17V 15V 13V 11V 9V
25
25
20
9V
IC - Amperes
7V
IC - Amperes
20 15 10 5 0
7V
15 10 5 0 0 2 4 6 8 10 12 14 16 18
0
2
4
6
8
10
12
14
16
18
VCE - Volts
VCE - Volts
Fig. 1 Typ. Output Characteristics
30
VCE = 20V
Fig. 2 Typ. Output Characteristics
30 25
25
IF - Amperes
TJ = 25C
IC - Amperes
TJ = 125C
TJ = 25C
TJ = 125C
20 15 10 5 0 4 6 8 10 12 14
20 15 10 5 0
C4
0 2 4 6 8 10
VGE - Volts
VF - Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse Conduction
15
16 14 12
VCE = 600V IC = 5A
ICM - Amperes
VGE - Volts
10 8 6 4 2 0 0 10 20 30 40 50
10
TJ = 125C VCEK < VCES
5
IXBH 9N140G IXBH 9N160G
0 0 400 800 1200 1600
QG - nanocoulombs
VCE - Volts
Fig. 5 Typ. Gate Charge characteristics
Fig. 6 Reverse Biased Safe Operating Area RBSOA
(c) 2000 IXYS All rights reserved
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IXBH 9N140G IXBH 9N160G
140 120
VCE = 960V VGE = 10V RG = 27 TJ = 125C
250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60
VCE = 960V VGE = 10V IC = 5A TJ = 125C
100 80 60 40
IC - Amperes
td(off )- nanoseconds
tfi - nanoseconds
Rg - Ohms
Fig. 7 Typ. Fall Time
10
Fig. 8 Typ. Turn Off Delay Time
1
ZthJC - K/W
0.1
Single Pulse
0.01
C4
0.001 0.00001
IXBH 9-140/160G
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 9 Typ. Transient Thermal Impedance
(c) 2000 IXYS All rights reserved
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